NAND Flash
Features
  • Support IC Vendors: Hynix, Intel Micron, Samsung, ST, Toshiba, Winbond, Macronix, Cypress(Spansion), ONFI, Dosilicon, ESMT, Zetta, GD ( *Customized Available )
  • LA08- tip: 8 Data Channel
  • LA09- tip: 8 Data Channel + 1 CLK Channel​
  • NAND-tip: 4 Data Channel + 2 Analog
  • Support Data(I/O) pin: x8, x16
  • Support multiple brands: Hynix, Intel, Micron, Samsung, ST, Toshiba, Winbond, Macronix, Cypress(Spansion), ONFI, Dosilicon, ESMT, Zetta, GigaDevice, etc. (supports custom data)
  • supports ONFI 4.1 (NV-DDR3), Mode 8 / Toggle DDR 2.0 ~267MHz
  • Timing Check function setting (only in logic analyzer mode, can be done in Bus Decode Settings)
Features
  • Support IC Vendors: Hynix, Intel Micron, Samsung, ST, Toshiba, Winbond, Macronix, Cypress(Spansion), ONFI, Dosilicon, ESMT, Zetta, GD ( *Customized Available )
  • LA08- tip: 8 Data Channel
  • LA09- tip: 8 Data Channel + 1 CLK Channel​
  • NAND-tip: 4 Data Channel + 2 Analog
  • Support Data(I/O) pin: x8, x16
  • Support multiple brands: Hynix, Intel, Micron, Samsung, ST, Toshiba, Winbond, Macronix, Cypress(Spansion), ONFI, Dosilicon, ESMT, Zetta, GigaDevice, etc. (supports custom data)
  • supports ONFI 4.1 (NV-DDR3), Mode 8 / Toggle DDR 2.0 ~267MHz
  • Timing Check function setting (only in logic analyzer mode, can be done in Bus Decode Settings)
Scheme name NAND Flash
Tip name NAND
Channel combination 4+2 (Data+Analog)
Trigger voltage (Data) range -0.5V ~ +4.8V
Trigger voltage (Data) resolution 21mV
Trigger voltage (Data) accuracy ±100mV + 5% *Vth
Input voltage (Data) Non-maximum destructive withstand voltage ±15V DC+AC peak
Input voltage (Data) working range -1V~8V
Input voltage (Data) Sensitivity ~300mV
Input impedance(Data) 1MΩ || 5pF
Input voltage (Analog) non-maximum destructive withstand voltage -0.5V ~ +8V DC+AC peak
Input voltage (Analog) working range 0V ~ 4V
Input voltage (Analog) resolution ~1mV
Input voltage (Analog) Sampling rate 1M
Input impedance(Analog) 1MΩ || 100pF